 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ISSUE 1 JANUARY 1996 ZDT6753 C1 C1 C2 C2 PARTMARKING DETAIL T6753 B1 E1 B2 E2 NPN PNP SM-8 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Tj:Tstg NPN 120 100 5 6 2 PNP -120 -100 -5 -6 -2 UNIT V V V A A C -55 to +150 THERMAL CHARACTERISTICS PARAMETER Total Power Dissipation at Tamb = 25C* Any single die on Both die on equally Derate above 25C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally SYMBOL Ptot VALUE 2.25 2.75 18 22 55.6 45.5 UNIT W W mW/ C mW/ C C/ W C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 375 ZDT6753 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 70 100 55 25 140 0.13 0.23 0.9 0.8 200 200 110 55 175 30 80 1200 MIN. 120 100 5 0.1 10 0.1 0.3 0.5 1.25 1 TYP. MAX. UNIT V V V A A A CONDITIONS. IC=100A, IE =0 IC=10mA, IB =0* IE=100A, IC =0 VCB=100V VCB=100V,T amb =100C VEB=4V, IC =0 IC=1A, IB=100mA* IC=2A, IB=200mA* IC=1A, IB=100mA* IC=1A, VCE=2V* IC=50mA, VCE=2V IC=500mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* V V V 300 Transition Frequency Output Capacitance Switching Times fT Cobo ton toff MHz pF ns ns IC=100mA, VCE=5V f=100MHz VCB=10V, f=1MHz IC=500mA, VCE=10V IB1=IB2=50mA *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% For typical characteristics graphs see FZT653 datasheet. 3 - 376 ZDT6753 PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO VCEO(SUS) V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 70 100 55 25 100 -0.17 -0.30 -0.90 -0.8 200 200 170 55 140 30 40 600 MIN. -120 -100 -5 -0.1 -10 -0.1 -0.3 -0.5 -1.25 -1.0 TYP. MAX. UNIT V V V A A A CONDITIONS. IC=-100A IC=-10mA* IE=-100A VCB=-100V VCB=-100V, Tamb=100C VEB=-4V IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-1A, IB=-100mA* IC=-1A, VCE=-2V* IC=-50mA, VCE=-2V IC=-500mA, VCE=-2V* IC=-1A, VCE=2V* IC=-2A, VCE=-2V* V V V V 300 Transition Frequency Output Capacitance Switching Times fT Cobo ton toff MHz pF ns ns IC=-100mA, VCE=5V f=100MHz VCE=-10V, f=1MHz IC=-500mA, VCC=-10V IB1=IB2=50mA *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% For typical characteristics graphs see FZT753 datasheet. 3 - 377 |
Price & Availability of ZDT6753
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |